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  DFM&TCAD培訓課程
   班級規模及環境
       為了保證培訓效果,增加互動環節,我們堅持小班授課,每期報名人數限3到5人,多余人員安排到下一期進行。
   上課時間和地點
上課地點:【上海】:同濟大學(滬西)/新城金郡商務樓(11號線白銀路站) 【深圳分部】:電影大廈(地鐵一號線大劇院站)/深圳大學成教院 【北京分部】:北京中山/福鑫大樓 【南京分部】:金港大廈(和燕路) 【武漢分部】:佳源大廈(高新二路) 【成都分部】:領館區1號(中和大道) 【沈陽分部】:沈陽理工大學/六宅臻品 【鄭州分部】:鄭州大學/錦華大廈 【石家莊分部】:河北科技大學/瑞景大廈
近開課時間(周末班/連續班/晚班)
DFM&TCAD培訓課程:2025年8月18日..用心服務..........--即將開課--........................
   學時
     ◆課時: 共5天,30學時

        ◆外地學員:代理安排食宿(需提前預定)
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        ☆合格學員免費推薦工作

        

        專注高端培訓17年,曙海提供的課程得到本行業的廣泛認可,學員的能力
        得到大家的認同,受到用人單位的廣泛贊譽。

        ★實驗設備請點擊這兒查看★
   新優惠
       ◆團體報名優惠措施:兩人95折優惠,三人或三人以上9折優惠 。注意:在讀學生憑學生證,即使一個人也優惠500元。
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        3、培訓合格學員可享受免費推薦就業機會。 。專注高端培訓13年,曙海提供的證書得到本行業的廣泛認可,學員的能力得到大家的認同,受到用人單位的廣泛贊譽。

  DFM&TCAD培訓課程
培訓方式以講課和實驗穿插進行

課程描述:

Overview
SENTAURUS WORKBENCH: The class covers the basics of this framework tool that allows organization of parameterized TCAD simulations in a single project with many possible splits, or branches.

SENTAURUS PROCESS: Users will learn the specifics of this process simulation tool, in terms of syntax and introduction of various models to simulate fabrication process flows.

SENTAURUS STRUCTURE EDITOR: The class will show you how to create 2D and 3D device structures, import structures from a prior process simulation step, make boundary simplifications and properly mesh structures for any subsequent device simulations.

SENTAURUS DEVICE: The class covers the basics how to simulate the electrical characteristics of devices created with SENTAURUS PROCESS and/or SENTAURUS STRUCTURE EDITOR.

SENTAURUS VISUAL & INSPECT: Users will be taught how to visualize the structures and results generated from the process and device simulations, using these tools.

Objectives
At the end of this workshop the student should be able to:
  • Run parameterized process and device simulations
  • Visualize simulated doping profiles, structure boundaries and materials, I-V curves and internal device characteristics such as carrier densities, current densities, and electric fields.
  • Successfully combine mask layouts and process flows to perform simulations of fabrication processes involving single or multiple semiconductors, insulators and metals.
  • Select proper models for the simulation of fabrication processes and electrical behavior of devices
  • Properly mesh structures for adequate simulations
  • Perform AC analyses of RF parameters

Course Outline

Unit 1
Tool Overview
  • What is TCAD?
  • TCAD Tool Overview
SENTAURUS WORKBENCH
  • Getting Started
  • Running a Project
  • Creating a New Project
  • Building Multiple Experiments
  • Miscellaneous Features
SWB HANDS-ON ? FULL NMOS FLOW SIMULATION
  • Process flow
  • Re-meshing
  • Device simulation
  • Parameter extraction
Process simulation I - SENTAURUS PROCESS
  • Getting Started
  • 1D Process Simulation
  • 2D Process Simulation
  • Interface with ICWB
Unit 2
Process simulation II - SENTAURUS PROCESS
  • Changing Parameters and Models
  • Working with a Custom Calibration File
  • Working with SENTAURUS PROCESS Advanced Calibration
Process simulation III - SENTAURUS PROCESS
  • SProcess under SWB
  • Meshing with MGOALS
  • Other topics/Q&A
Structure editing, Meshing I - SENTAURUS STRUCTURE EDITOR
  • Getting Started
  • Generating 2D Boundaries
  • Generating Doping Profiles
  • Generating Meshes
  • Scripting and Parameterization
Structure editing, Meshing II - SENTAURUS STRUCTURE EDITOR
  • Three-Dimensional Structures
  • Process Emulation Mode
Unit 3
Device simulation I - SENTAURUS DEVICE
  • SENTAURUS DEVICE Basics
  • Quasistationary and Transient simulations
  • Parameter file
Device simulation II - SENTAURUS DEVICE
  • Carrier Transport Models
  • Mixed-mode SENTAURUS DEVICE
  • AC analysis
Device simulation III - SENTAURUS DEVICE
  • Advanced Examples
  • Solving convergence problems in SENTAURUS DEVICE
  • Q&A
Visualization tools - INSPECT & SENTAURUS VISUAL
  • Visualization of X-Y plots and post processing of results
  • Visualization of 2D and 3D structures along with simulation results
  • Interactive mode
  • Scripting - parameter extraction